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- Article name
- Photoelectric characteristics of MIS-structures on the basis of HES HgCdTe MBE
- Authors
- Voitsekhovskii A. V., , vav@elefot.tsu.ru, TSU, 36 Lenin av., Tomsk, 634050, Russia
Dvoretsky S. A., , ifp@isp.nsc.ru, Institute of Semiconductor Physics, SB of the RAS, 13 Lavrentiev av., Novosibirsk, 630090, Russia
Mikhailov N. N., , ifp@isp.nsc.ru, Institute of Semiconductor Physics, SB of the RAS, 13 Lavrentiev av., Novosibirsk, 630090, Russia
Vasil'ev V. V., , ifp@isp.nsc.ru, IPS SB RAS, 13 Lavrent'eva av., Novosibirsk, 630090, Russia
Varavin V. S., , ifp@isp.nsc.ru, IPS SB RAS, 13 Lavrent'eva av., Novosibirsk, 630090, Russia
Sidorov Yu. G., , ifp@isp.nsc.ru, IPS SB RAS, 13 Lavrent'eva av., Novosibirsk, 630090, Russia
Yakushev M. V., , ifp@isp.nsc.ru, IPS SB RAS, 13 Lavrent'eva av., Novosibirsk, 630090, Russia
Nesmelov S. N., , vav@elefot.tsu.ru, ASD "SPTI TSU", 1 Novosobornaya str., Tomsk, 634050, Russia
Dzyadukh S. M., , vav@elefot.tsu.ru, ASD "SPTI TSU", 1 Novosobornaya str., Tomsk, 634050, Russia
Mashukov Yu. P., , ifp@isp.nsc.ru, IPS SB RAS, 13 Lavrent'eva av., Novosibirsk, 630090, Russia
- Keywords
- photosignal / charge carriers / space charge / cavers
- Year
- 2010 Issue 3 Pages 119 - 123
- Code EDN
- Code DOI
- Abstract
- The investigation of dependencies of photo-EMF from frequency and voltage bias for MIS-structures in base graded-band HES HgCdTe MBE were carry out. The life time of minority carriers in space-charge region for various composition in graded-band layer and for different insulators were determination. For MIS-structures in base of HgCdTe/CdTe, HgCdTe/CdTe-SiO2/Si3N4 and HgCdTe/CdTe/ZnTe n- and p-types the kind of dependencies of small-signal photo-EMF from voltage bias were determinated at used by functional insulator CdTe formed by at grown heteroepitaxial structures.
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