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- Article name
- To the theory of fluctuation phenomenon in p-n-junctions with a short base
- Authors
- Selyakov A. Yu., , ayusel@mail.ru, Orion R&D Association, 46/2, Enthuziastov shosse, Moscow, 111123, Russia
- Keywords
- fluctuations / spectral density / p+-n-transition / equation
- Year
- 2010 Issue 2 Pages 55 - 66
- Code EDN
- Code DOI
- Abstract
- On the basis of exact solution of Langevin equation a dependence from applied voltage of fluctuations spectral density (SDF) of diffusion current and photocurrent of p+-n-junction with short base for cases ohmic and blocking contact to the base was calculated. It is shown, what width of frequency range, in which SPF of diffusion current of p+-n-junction with short base and blocking contact to the base has a less value, what SPF of diffusion current of analogical p-n-junction with long base depends on a value and sign of voltage, applied to p-n-junction.
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