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- Article name
- Investigation of the effect of preparation of GaAs substrates surface on the properties of МОСVD-epitaxial layers of СdTe and CdHgTe
- Authors
- Kotkov А. P., , , Institute of Chemistry of High-Purity Substances of the Russian Academy of Sciences, 49 Tropinin str., 603950, Nizhny Novgorod, Russia
Moiseev А. N., , , Institute of Chemistry of High-Purity Substances of the Russian Academy of Sciences, 49 Tropinin str., 603950, Nizhny Novgorod, Russia
Grishnova N. D., , grichnova@bk.ru, Institute of Chemistry of High-Purity Substances of the Russian Academy of Sciences, 49 Tropinin str., 603950, Nizhny Novgorod, Russia
Chilyasov А. V., , , Institute of Chemistry of High-Purity Substances of the Russian Academy of Sciences, 49 Tropinin str., 603950, Nizhny Novgorod, Russia
- Keywords
- substrate / morphology / surface / temperature / heterolayer
- Year
- 2010 Issue 1 Pages 81 - 86
- Code EDN
- Code DOI
- Abstract
- The effect of pre-growth preparation of GaAs substrates on crystal perfection and morphology of the surface with grown MOCVD-layers of CdTe and CdxHg1-xTe is investigated. It is shown that the optimum annealing temperature for GaAs(100) substrates in hydrogen environment is 580-590 ° С and for GaAs(111)В substrates is 530-550 ° С. At higher annealing temperature the surface morphology of the grown CdTe layers degrades and at lower temperature a degradation of their crystal perfection is observed. Application of homoepitaxial layer of gallium arsenide on GaAs(100) substrates can be used as an effective technique to reduce the density of hillocks on the surface of CdxHg1-xTe(100)/CdTe(100)/GaAs(100) heterolayers.
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