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- Article name
- SB IR detectors with sensitivity in region, where quantums energy is less then the barrier height
- Authors
- Ivanov V. G., , vivanovg@gmail.com, Research Center of the 4-th Central Research Institute of the RF Navy, 41 Zhanovskaya, St.-Petersburg, Russia
Ivanov G. V., , , Research Center of the 4-th Central Research Institute of the RF Navy, 41 Zhanovskaya, St.-Petersburg, Russia
Kamenev А. А., , , Research Center of the 4-th Central Research Institute of the RF Navy, 41 Zhanovskaya, St.-Petersburg, Russia
Arutyunov V. A., , , Electron Central Research Institute, 68 Torez av., 194223, St.-Petersburg, Russia
Stepanov R. M., , , Electron Central Research Institute, 68 Torez av., 194223, St.-Petersburg, Russia
Panasenkov V. I., , , Electron Central Research Institute, 68 Torez av., 194223, St.-Petersburg, Russia
- Keywords
- detector / electromagnetic radiation / thermal electron emoission / Shottky barrier
- Year
- 2010 Issue 1 Pages 87 - 93
- Code EDN
- Code DOI
- Abstract
- The physical mechanism of operation, design and experimental investigation results of new tape IR detectors based on the hot electrons gas emission (Hot Electrons Gas Emission Detectors - HEGED) is considered. In such detectors the effect of change of a thermionic emission current in a semiconductor diode with a Schottky barrier (SB) is used by direct transfer of energy of the absorbed radiation to the system of electronic gas in quasimetallic layer of a barrier. The opportunity to detect the radiation with quantums energy less, than the height of Schottky diode potential barrier, and to obtain a substantial growth of a cutoff wavelength of the PtSi/Si detector were demonstrated.
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