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- Article name
- IR uncooled photovoltaic cell on basis of CdхHg1-хTe/Si (х = 0.3)
- Authors
- Savkina R. K., , , Lashkarev Institute of Semiconductor Physics of National Academy Science of Ukraine, 41 Nauka av., Kiev, 03028, Ukraine
Sizov F. F., , , Lashkarev Institute of Semiconductor Physics of National Academy Science of Ukraine, 41 Nauka av., Kiev, 03028, Ukraine
Smirnov A. V., , alex_tenet@isp.kiev.ua, Lashkarev Institute of Semiconductor Physics of National Academy Science of Ukraine, 41 Nauka av., Kiev, 03028, Ukraine
Deriglazov V. A., , , Lashkarev Institute of Semiconductor Physics of National Academy Science of Ukraine, 41 Nauka av., Kiev, 03028, Ukraine
Yakushev M. V., , , Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Science, 13 Lavrent'ev av., Novosibirsk, 630090, Russia
- Keywords
- IR detector / deformation / piezoproperties / CdHgTe / heterostructure
- Year
- 2011 Issue 4 Pages 58 - 64
- Code EDN
- Code DOI
- Abstract
- An uncooled IR detector on basis of Cd0.3Hg0.7Te/(310)Si heterostructure is investigated. The physical simulation of a diffusion-drift model has been made at 300 K.
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