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- Article name
- Features of the internal getter formation for CCD in 150-mm wafers made of silicon with more perfect structure
- Authors
- Vasilyev I. N., , waxzzz@yandex.ru, St.-Petersburg State Electrotechnical University LETI, St.-Petersburg, Russia
Kostyukov E. V., , , Federal State Unitary Enterprise Science & Production Enterprise "Pulsar", 27 Okruzhnoi proyezd, Moscow, 105187, Russia
Pospelova M. A., , mpospelova@pulsarnpp.ru, Federal State Unitary Enterprise Science & Production Enterprise "Pulsar", 27 Okruzhnoi proyezd, Moscow, 105187, Russia
Rusak T. F., , , Federal State Unitary Enterprise Science & Production Enterprise "Pulsar", 27 Okruzhnoi proyezd, Moscow, 105187, Russia
Petlitski A. N., , , JSC "Integral", 16 Korzhenevsky str., Minsk, 220108, Belarus
Turtsevich A. S., , , JSC "Integral", 16 Korzhenevsky str., Minsk, 220108, Belarus
- Keywords
- internal gettering / charge-coupled device / oxygen precipitation / vacancy flux in the bulk of wafer
- Year
- 2011 Issue 4 Pages 99 - 103
- Code EDN
- Code DOI
- Abstract
- For internal getter creation in the 150mm CZ silicon wafers boron doped with resistivity 20 Ohm ∙ cm ("ELMA" 2003 year) in contrast to the 100-mm CZ silicon wafers (the same dopant and resistivity, ELMA, 1986, 1990) it is necessary either to make long annealing at 700 °C or to perform the first anneal at 1200 °C in oxygen ambient. This implies that the 150-mm silicon wafers contain few grown-in defects, and therefore for precipitate nucleation and growth, it is necessary either to make a long low-temperature anneal or to have a vacancy flux in the bulk of a wafer which is formed during oxidation of the wafer surface in course of the first anneal at 1200 °C.
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