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- Article name
- Estimation of values of electrophysical parameters of semiconductor materials by results of measurements of excitons cathodoluminescence
- Authors
- Polyakov А. N., , andrei-polyakov@mail.ru, Kaluga State University named after K. E. Tsiolkovsky, 26 Stepan Rasin str., Kaluga, 248023, Russia
Noltemeyer M., , martin.noltemeyer@ovgu.de, Otto-von-Guericke-Universität-Magdeburg, 2 Universitätsplatz, Magdeburg, 39106, Germany
Hempel T., , , Otto-von-Guericke-Universität-Magdeburg, 2 Universitätsplatz, Magdeburg, 39106, Germany
Christen J., , , Otto-von-Guericke-Universität-Magdeburg, 2 Universitätsplatz, Magdeburg, 39106, Germany
Stepovich M. A., , , Kaluga State University named after K. E. Tsiolkovsky, 26 Stepan Rasin str., Kaluga, 248023, Russia
- Keywords
- cathodoluminescence / exciton / quantum well / diffusion coefficient / mobility / scattering / zinc oxide
- Year
- 2012 Issue 6 Pages 41 - 46
- Code EDN
- Code DOI
- Abstract
- Possibility of time-of-flyght cathodoluminescence measurements usage for an estimation of diffusion constant and mobility of excitons in single quantum well in direct-gap semiconductor heterostructures is shown. Results of experimental researches of ZnMgO/ZnO heterostructure with ZnO quantum well that is perspective for practical usage are presented. On the basis of the analysis of excitons mobility temperature dependence (4,8-180 K) assumptions of influence of quantum well border heterointerface scattering mechanisms are formulated.
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