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- Article name
- DESIGN AND INDUSTRIAL PROCESS ENGINEERING OF MICROWAVE POWER TRANSISTORS ON HETEROEPITAXIAL AlGaN/GaN STRUCTURES
- Authors
- Burobin V. A., , openline@gz-pulsar.ru, State Plant "Pulsar", Moscow, Russia
Konovalov А. М., , , State Plant "Pulsar", Moscow, Russia
Makarov А. А., , , State Plant "Pulsar", Moscow, Russia
Kargin N. I., , , National Nuclear Research University "MEPHI", Moscow, Russia
Kuznetsov A. L., , , National Nuclear Research University "MEPHI", Moscow, Russia
- Keywords
- gallium nitride / heterostructures / two-dimensional electron gas (2DEG) / transistors
- Year
- 2012 Issue 4 Pages 66 - 71
- Code EDN
- Code DOI
- Abstract
- This report is dedicated to the innovative research and advanced industrial techno-logy of the microwave power transistors manufacturing on AlGaN/GaN heterostructures. Further it considers the prospects of developing an electronic component base for power applications using the wide-gap semiconductor materials. The important issues of choosing the substrate material as well as technological aspects of heteroepitaxial structures formation are reviewed.
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