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- Article name
- High-resolution microscopy investigations of HgCdTe heteroepitaxial structures
- Authors
- Permikina E. V., , , Orion R&P Association, 46/2 Enthusiasts road, Moscow, 111123, Russia
Kashuba A. S., , , Orion R&P Association, 46/2 Enthusiasts road, Moscow, 111123, Russia
Ljalikov A. V., , , Orion R&P Association, 46/2 Enthusiasts road, Moscow, 111123, Russia
Korotaev Е. D., , , Orion R&P Association, 46/2 Enthusiasts road, Moscow, 111123, Russia
Burlakov I. D., , IDBUR@orion-ir.ru, Orion R&P Association, 46/2 Enthusiasts road, Moscow, 111123, Russia
- Keywords
- epitaxial layers / HgCdTe / hillocks / morphology / V-shaped defects / atomic-force microscope
- Year
- 2012 Issue 5 Pages 81 - 90
- Code EDN
- Code DOI
- Abstract
- Presented are results of study of the HgCdTe epitaxial layers grown on the GaAs substrates by MBE. The scanning atomic force microscopy and high-resolution electron-ion microscopy have been used. The defects of heterostructure surfaces have been obtained such as hillocks, microvoids and V-shaped defects. Hillocks were observed various on a magnitude. Мicrovoids had facetted. V-shaped defects were completely covered with polycrystalline material.
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