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- Article name
- Features of the planar p+-n-junctions on silicon and indium antimonide
- Authors
- Astakhov V. P., , ko-ckb@mail.ru, Moscow Plant Sapfir, 4a Dnepropetrovsky av., Moscow, 117345, Russia
Likhachev G. M., , ko-ckb@mail.ru, Moscow Plant "Sapfir", 4a Dnepropetrovsky av., Moscow, 117345, Russia
- Keywords
- junction / indium antimonide / silicon / experiment
- Year
- 2012 Issue 4 Pages 83 - 85
- Code EDN
- Code DOI
- Abstract
- Obtained are two common characteristic peculiarities of the planar p+-n-junctions on Si and InSb ─ presence of the electrotraining effect and positive influence of the additional neareplaced planar short-circuit p+-n-junctions on the direct and reverse volt-ampear characteristics. These peculiarities are discussed. It can be made a supposition that they will repeat on planar p+-n-junctions from others semiconductor materials.
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