To obtain access to full text of journal and articles you must register!
- Article name
- Multiunit fast-acting photodiodes on the basis of the InGaAs/InP heterostructures
- Authors
- Chinareva I. B., , orion@orion-ir.ru, Orion R&P Association, 46/2 Enthusiasts road, Moscow, 111123, Russia
Andreev D. S., , orion@orion-ir.ru, Orion R&P Association, 46/2 Enthusiast road, Moscow, 111123, Russia
Grishina T. N., , orion@orion-ir.ru, Orion R&P Association, 46/2 Enthusiast road, Moscow, 111123, Russia
Zaletaev N. B., , orion@orion-ir.ru, Orion R&P Association, 46/2 Enthusiast road, Moscow, 111123, Russia
Trishenkov M. A., , orion@orion-ir.ru, Orion R&P Association, 46/2 Enthusiast road, Moscow, 111123, Russia
- Keywords
- array / photosensitive pixel / heteroepitaxial structure / InGaAs/InP / photolithography / diffusion
- Year
- 2012 Issue 4 Pages 86 - 90
- Code EDN
- Code DOI
- Abstract
- Investigated are the multiunit fast-acting photodiodes on the basis of the InGaAs/InP he-terostructures. Obtained are the basic technological operations.
- Text
- BUY for read the full text of article
- Buy
- 100.00 rub
