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- Article name
- Factors determinating anisotropy of ion beam etching for the sputtered in layer
- Authors
- Klimanov E. A., , orion@orion-ir.ru, Orion R&P Association, 46/2 Enthusiasts road, Moscow, 111402, Russia
Sednev M. V., , orion@orion-ir.ru, Orion R&P Association, 46/2 Enthusiasts road, Moscow, 111402, Russia
Boltar K. O., , orion@orion-ir.ru, Orion Research-and-Production Association, 9 Kosinskaya str., Moscow, 111402, Russia
Mezin Yu. S., , orion@orion-ir.ru, Orion Research-and-Production Association, 9 Kosinskaya str., Moscow, 111402, Russia
Sharonov Yu. P., , orion@orion-ir.ru, Orion Research-and-Production Association, 9 Kosinskaya str., Moscow, 111402, Russia
- Keywords
- ion-beam etching / indium / microcontact / photodetector
- Year
- 2012 Issue 1 Pages 90 - 93
- Code EDN
- Code DOI
- Abstract
- Investigated are factors influencing on ion-beam etching process for 5-12 μm indium film Not-etched areas of indium with the cone-shape form are remained after the process. The influence of sprayed material redeposition, the indium interaction with photoresist mask and profile of the photoresist on final etching form are discussed.
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