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- Article name
- Relaxation of photoconductivity in porous silicon with the cylindrical geometry of pores
- Authors
- Monastyrskii L. S., , monastyrsky@electronics.wups.lviv.ua, Ivan Franko National University, 50 Dragomanov str, Lviv, 79005, Ukraine
Sokolovskii B. S., , , Ivan Franko National University, 50 Dragomanov str, Lviv, 79005, Ukraine
Pavlyk M. R., , , Ivan Franko National University, 50 Dragomanov str, Lviv, 79005, Ukraine
Aksiment'eva E. I., , , Ivan Franko National University, 50 Dragomanov str, Lviv, 79005, Ukraine
- Keywords
- porous silicon / sensors / photoconductivity / photoconductivity kinetics
- Year
- 2012 Issue 1 Pages 94 - 97
- Code EDN
- Code DOI
- Abstract
- The model of relaxation of photoconductivity of porous silicon, in which recombination of photocarriers is taken into account on the surface of cylindrical pores at the shutdown of illumination, is presented and numerically investigated. Time evolution of the porous silicon photoconductivity and dependence of the photoconductivity relaxation time on the surface recombination velocity as well as on the radius of pores and average distance between them are obtained by the finite elements method.
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