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- Article name
- Photosensitive epitaxial PbSе1-хТех<Gа> films
- Authors
- Farzaliyev S. S., , afin@aport2000.ru, H. M. Abdullayev Institute of Physics, NAS of Azerbaijan, 33 H. Javid, Baku, AZ1143,Azerbaijan
Nuriyev I. R., , afin@aport2000.ru, H. M. Abdullayev Institute of Physics, NAS of Azerbaijan, 33 H. Javid, Baku, AZ1143,Azerbaijan
Sadigov R. M., , afin@aport2000.ru, H. M. Abdullayev Institute of Physics, NAS of Azerbaijan, 33 H. Javid, Baku, AZ1143,Azerbaijan
Barkhalov B. Sh., , afin@aport2000.ru, H. M. Abdullayev Institute of Physics, NAS of Azerbaijan, 33 H. Javid, Baku, AZ1143,Azerbaijan
- Keywords
- epitaxial films / vapor / photosensitivity / solid solutions / isoperiodic
- Year
- 2012 Issue 1 Pages 107 - 109
- Code EDN
- Code DOI
- Abstract
- The results of research of epitaxial films of PbSе1-хТеx<Ga> (NGa ≤ 0.8 аt. %) received on dielectric substrates ВаF2 (111) and manufacturing of photosensitive elements on their basis have been presented. Isoperiodicity of crystal lattices and proximity of the thermal expansion factors for a substrate and grown PbSе1-xТеx (х = 0.2) films has enabled us to reception the films with perfect structure and high electric parameters. On the basis of the received films elements have been made which are photosensitive in the 3-5 mm range of the spectrum. The photosensitivity maximum corresponds to λmax = 5 mm.
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