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- Article name
- Particularities of forming the p-n-structures in the film polycrystalline silicon
- Authors
- Aliev R., , alievuz@yahoo.com, Andijan State University, 129 University str., Andijan, 710000, Uzbekistan
Mukhtarov E., , erkinand@rambler.ru, Andijan State University, 129 University str., Andijan, 710000, Uzbekistan
- Keywords
- volt-ampere characteristic / polycrystalline silicon / film / p-n-structures
- Year
- 2011 Issue 2 Pages 19 - 22
- Code EDN
- Code DOI
- Abstract
- The volt-ampere characteristics of the structures with p-n junction were investigated. These structures have been were formed by means of growing the р-type conductivity films, thermal diffusion and ion implantation of boron atoms into the n-type polycrystalline silicon layers. The S-form of volt-ampere characteristics was revealed for the investigated structures. This effect is determined by changing the conductivities of the base and grain boundaries under thermal processing.
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