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- Article name
- Anodization of silicon and aluminum in the non-self-sustained glow discharge plasma
- Authors
- Burachevskiy Yu. A., , Yury _BYA@mail.ru, Tomsk State University of Control Systems and Radioelectronics, 40 Lenin ave., Tomsk, 634050, Russia
Burdovitsin V. A., , , Tomsk State University of Control Systems and Radioelectronics, 40 Lenin ave., Tomsk, 634050, Russia
Oks E. M., , , Tomsk State University of Control Systems and Radioelectronics, 40 Lenin ave., Tomsk, 634050, Russia
- Keywords
- oxidation / glow discharge / oxygen plasma
- Year
- 2011 Issue 2 Pages 23 - 26
- Code EDN
- Code DOI
- Abstract
- Results of silicon and aluminum anodization in oxygen plasma are presented. Plasma was formed by the hollow cathode discharge in which an electron beam excitation at the oxygen pressure 20 Pa was applied. The current density through anodized sample did not exceed 1.5 mA/cm2, and its temperature was 200-250 °C. On the aluminum and silicon surfaces, the continuous faultless Al2O3 and SiO2 films were formed. Growth rates of oxide layers were 150-200 nm/hour for Al2O3 and 400-800 nm/hour for SiO2.
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