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- Article name
- Gallium-arsenide photodetective assemblies of the UV range for multispectral optoelectronic systems
- Authors
- Legky V. N., , , Novosibirsk State Technical University, 20 Marx av., Novosibirsk, 630092, Russia
Galun B. V., , , Novosibirsk State Technical University, 20 Marx av., Novosibirsk, 630092, Russia
Kiselev M. V., , sniios@mail.ru, Novosibirsk State Technical University, 20 Marx av., Novosibirsk, 630092, Russia
Tolbanov O. P., , , Tomsk State University, 36 Lenin av., Tomsk, 634050, Russia
Mokeev D. Yu., , , Tomsk State University, 36 Lenin av., Tomsk, 634050, Russia
Tyazhev A. V., , , Tomsk State University, 36 Lenin av., Tomsk, 634050, Russia
- Keywords
- gallium-arsenide / semiconductor photodetectors / ultraviolet radiation / current sensitivity
- Year
- 2011 Issue 2 Pages 112 - 115
- Code EDN
- Code DOI
- Abstract
- The UV range gallium-arsenide PDA prototype has been investigated in this work. A laboratory test obtained high grade of the PDA current sensitivity in the 220-320 nm range.
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