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- Article name
- The electrical characteristics of MIS-structures based on HES HgCdTe MBE with non-uniform distribution of composition
- Authors
- Voitsekhovskii A. V., , vav@elefot.tsu.ru, TSU, 36 Lenin av., Tomsk, 634050, Russia
Nesmelov S. N., , , ASD "SPTI TSU", 1 Novosobornaya str., Tomsk, 634050, Russia
Dzyadukh S. M., , , ASD "SPTI TSU", 1 Novosobornaya str., Tomsk, 634050, Russia
Dvoretsky S. A., , ifp@isp.nsc.ru, Institute of Semiconductor Physics, SB of the RAS, 13 Lavrentiev av., Novosibirsk, 630090, Russia
Mikhailov N. N., , ifp@isp.nsc.ru, Institute of Semiconductor Physics, SB of the RAS, 13 Lavrentiev av., Novosibirsk, 630090, Russia
Vasil'ev V. V., , ifp@isp.nsc.ru, IPS SB RAS, 13 Lavrent'eva av., Novosibirsk, 630090, Russia
Varavin V. S., , ifp@isp.nsc.ru, IPS SB RAS, 13 Lavrent'eva av., Novosibirsk, 630090, Russia
Sidorov Yu. G., , ifp@isp.nsc.ru, IPS SB RAS, 13 Lavrent'eva av., Novosibirsk, 630090, Russia
Yakushev M. V., , ifp@isp.nsc.ru, IPS SB RAS, 13 Lavrent'eva av., Novosibirsk, 630090, Russia
- Keywords
- MIS-structure / mercury cadmium telluride / composition / graded-gap layer
- Year
- 2011 Issue 2 Pages 116 - 121
- Code EDN
- Code DOI
- Abstract
- The photoelectric and electro-physical characteristics of MIS structures based on hetero-epitaxial HgCdTe MBE with non-uniform composition of СdТе were experimentally investigated. It is shown that the increase of the composition of СdТе at surface leads to an increase in the differential resistance of the space charge region for the MIS structures based on p-Hg0.78Cd0.22Te. The greatest influence of regions with sharply higher composition of CdТе on the electrical characteristics of MIS structures based on n-Hg0.7Cd0.3Te appears at the location of these regions near the boundary of the insulator-semiconductor.
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