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- Article name
- Epitaxial synthesis of diamond layers on a single crystal diamond substrate in the torch microwave plasmatron
- Authors
- Sergeichev K. F., , kserg@fpl.gpi.ru, General Physics Institute named after A. M. Prohorov, RAS, 38 Vavilov str., Moscow, 119991, Russia
Lukina N. A., , , Prokhorov General Physics Institute, 38 Vavilov str., Moscow, 119991, Russia
- Keywords
- microwave discharge / diamond / film / microscopy / plasma
- Year
- 2010 Issue 6 Pages 44 - 49
- Code EDN
- Code DOI
- Abstract
- The epitaxial growth of diamond film was realized at atmospheric pressure on the facet (100) of synthetic diamond single crystal substrate (HPHT) with sizes ~ 4×4 mm under action of the torch microwave discharge, activated by home oven magnetron radiation with power less than 1 kW in gases mixture of argon-hydrogen at high methane content (up to 25 % in relative to hydrogen). It was shown that the torch flame with its diameter ~2 mm and microwave power density absorbed in the torch volume >103 W/cm3 is effective for the epitaxial enlargement of the synthetic single crystal. The structure of the deposited film of high quality with thickness ~10 microns was studied by means of optical microscope, Raman spectroscopy and scanning electron microscopy.
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