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- Article name
- Investigation of electrophysical properties of MIS structures on basis of the MBE HgCdTe HES
- Authors
- Yakushev M. V., , , Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Science, 13 Lavrent'ev av., Novosibirsk, 630090, Russia
Voitsekhovskii A. V., , vav@elefot.tsu.ru, TSU, 36 Lenin av., Tomsk, 634050, Russia
Vasilyev V. V., , alpred@thermo.isp.nsc.ru, Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Science, 13 Lavrentyev av., Novosibirsk, 630090, Russia
Nesmelov S. N., , , ASD "SPTI TSU", 1 Novosobornaya str., Tomsk, 634050, Russia
Dzyadukh S. M., , , ASD "SPTI TSU", 1 Novosobornaya str., Tomsk, 634050, Russia
Mikhailov N. N., , ifp@isp.nsc.ru, Institute of Semiconductor Physics, SB of the RAS, 13 Lavrentiev av., Novosibirsk, 630090, Russia
Varavin V. S., , ifp@isp.nsc.ru, IPS SB RAS, 13 Lavrent'eva av., Novosibirsk, 630090, Russia
Sidorov Yu. G., , ifp@isp.nsc.ru, IPS SB RAS, 13 Lavrent'eva av., Novosibirsk, 630090, Russia
Dvoretsky S. A., , dvor@isp.nsc.ru, IPS SB RAS, 13 Ac. Lavrent'ev av., Novosibirsk, 630090, Russia
Mashukov Yu. P., , , IPS SB RAS, 13 Ac. Lavrent'ev av., Novosibirsk, 630090, Russia
- Keywords
- MIS-structure / mercury cadmium telluride / electrophysical characteristics
- Year
- 2010 Issue 6 Pages 95 - 99
- Code EDN
- Code DOI
- Abstract
- The experimental investigation of electrophysical characteristics of MIS structures on basis of HgCdTe/CdTe, HgCdTe/CdTe/SiO2/Si3N4 and HgCdTe/CdTe/ZnTe were carry out. For all structures the density of fixed and moved chares and also density of surface stated are determined. It is shown that best properties of boundary observed for HgCdTe/CdTe, formed at grown heteroepitaxial structures.
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