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- Article name
- Calculation of photosensitivity of porous silicon with the cylindrical geometry of pores
- Authors
- Sokolovskii B. S., , , Ivan Franko National University, 50 Dragomanov str, Lviv, 79005, Ukraine
Monastyrskii L. S., , monastyr@electronics.wups.lviv.ua, Ivan Franko National University of Lviv, 50 Dragomanov str., Lviv, 79005, Ukraine
Vasylyshyn V. S., , , Ivan Franko National University of Lviv, 50 Dragomanov str., Lviv, 79005, Ukraine
- Keywords
- photosensitivity / porous silicon / pores / calculation
- Year
- 2010 Issue 5 Pages 73 - 76
- Code EDN
- Code DOI
- Abstract
- The paper theoretically investigates a model of the photosensitivity of porous silicon with cylindrical pores in the condition of homogeneous generation of photocarriers. Dependences of the photoconductivity of a porous semiconductor on the velocity of recombination of nonequilibrium carriers at the surfaces of pores, radius of pores and average distance between them are analyzed. At large velocities of surface recombination the photoconductivity of porous semiconductor is shown to linearly decrease with increasing the pore's radius.
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