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- Article name
- Use of the indium bumps reflowing for the IR FPA assembly technology
- Authors
- Vasilyev V. V., , alpred@thermo.isp.nsc.ru, Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Science, 13 Lavrentyev av., Novosibirsk, 630090, Russia
Valisheva N. A., , , Institute of Semiconductor Physics, SB RAS, 13 Acad. Lavrent'ev Ave., Novosibirsk, 630090, Russia
Novoselov A. R., , novoselov@thermo.isp.nsc.ru, Institute of Semicondactor Physics, 13 Lavrent'ev av., Novosibirsk, 630090, Russia
Kosulina I. G., , , Institute of Semicondactor Physics, 13 Lavrent'ev av., Novosibirsk, 630090, Russia
Paulish A. G., , , Institute of Semicondactor Physics, 13 Lavrent'ev av., Novosibirsk, 630090, Russia
Kuzmin N. B., , , Institute of Semicondactor Physics, 13 Lavrent'ev av., Novosibirsk, 630090, Russia
- Keywords
- photodetector / photodiodes array / indium bumps / reflowed / method
- Year
- 2010 Issue 5 Pages 77 - 80
- Code EDN
- Code DOI
- Abstract
- In this paper, we describe a method of reflowing the indium bumps on silicon circuit. This method produces indium bumps in form of sphere or semi-sphere on silicon circuit, which paired to the unreflowed bumps on photodiodes array. It allows to obtain the binding of high quality. Another significant advantage of reflowed indium bumps is stability of mechanical characteristics not depending on ones of initial bumps that is important for automatic assembly systems.
- Text
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