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- Article name
- OPTIMIZATION OF STRUCTURE AND THE CIRCUIT DESIGN OF DOUBLE-COLLECTOR LATERAL BIPOLAR MAGNETOTRANSISTOR
- Authors
- Tikhonov R. D., , R.Tikhonov@tcen.ru, SMC"Technological Centre" MIET, Moscow, Russia
Polomoshnov S. A., , ps@tcen.ru, SMC "Technological Center" of MIET, Moscow, Russia
Kozlov A. V., , anton@dsd.miee.ru, TU MIET, Moscow, Russia
- Keywords
- bipolar magnetotransistor (BMT) / bipolar magnetotransistor formed in a well (BMTW) / bipolar magneto- transistor with the base in the well (BMTBW) / device simulation
- Year
- 2010 Issue 3 Pages 32 - 37
- Code EDN
- Code DOI
- Abstract
- Optimisation of double-collector bipolar magnetotransistor (BМТ) has been spent using the programs of device and processes modeling. Also the experimental research of dependence of maximum relative magnetosensitivity of lateral BМТ from its structure has been made. It has allowed raising the relative BMT's magnetosensitivity on a current. Experimental researches confirm possibility of increase of sensitivity according to the recommendations received as a result of calculations.
- Text
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