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- Article name
- BIOSENSOR USING SI NANOWIRE FILD-EFFECT TRANSISTOR
- Authors
- Kuznetsov Е. V., , kev@tcen.ru, SMC "Technological Centre" MIET, Moscow, Russia
Rybachek E. N., , REN@tcen.ru, SMC "Technological Centre", MIET, Moscow, Russia
- Keywords
- biosensor / nanowire / silicon nanowire field-effect transistors / sensitivity of sensor / Si-NW FET / CMOS silicon technology
- Year
- 2010 Issue 3 Pages 85 - 90
- Code EDN
- Code DOI
- Abstract
- This paper presents of study sensor characteristics depending on design features of sensitive element - silicon nanoware field effect transistors (Si-NW FET). Using TCAD Sentaurus full-parametrized 3D model of bio-sensor based on Si-NW FET was deve-loped. With this we were able to set any environment and geometry of transistor structure. The results of modeling, demonstrates that using Si-NW FET is possible to achieve high sensitivity of detection biological species.
- Text
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