29.10.2014
PRIKLADNAYA FIZIKA
(APPLIED PHYSICS)
THE SCIENTIFIC AND TECHNICAL JOURNAL
No. 4 Founded in 1994 Moscow 2014
C O N T E N T S
GENERAL PHYSICS
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R. I. Golyatina and S. A. Maiorov Calculation of the characteristics electron transport in a mixture of helium and xenon |
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5 |
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A. M. Anpilov, E. M. Barkhudarov, I. A. Kossyi, G. S. Luk’yanchikov, M. A. Misakyan, and I. V. Moryakov Thin film of nano-dimensional carbon deposition on the metallic samples as a multipactor prevention method |
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11 |
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A. N. Morozov and A. V. Skripkin Diffusion of ions in the electrolyte under the influence of random current |
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16 |
PLASMA PHYSICS AND PLASMA METHODS
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L. M. Vasilyak, S. P. Vetchinin, V. A. Panov, V. Ya. Pecherkin and E. E. Son Electric breakdown under the spread of pulsed current in a sand |
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20 |
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S. E. Andreev and D. K. Ulyanov Method of radiation spectrum control for plasma relativistic microwave oscillator in repetitively-rated regime |
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25 |
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N. N. Bogachev, I. L. Bogdankevich and N. G. Gusein-zade Simulation of plasma antenna operation modes |
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30 |
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V. O. German, A. P. Glinov, A. P. Golovin and P. V. Kozlov About influence of an exterior magnetic field on stability of an electric arc |
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35 |
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A. M. Borovskoi Simulation of gas flow in the cylindrical channels of high-voltage AC plasma torches subject to heating |
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40 |
PHOTOELECTRONICS
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K. O. Boltar, P. V. Vlasov, V. V. Eroshenkov and A. A. Lopuhin Research of photodiodes with a leakage current in the InSb FPA |
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45 |
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M. V. Sednev, K. O. Boltar, Y. P. Sharonov and A. A. Lopukhin Effects of ion-beam etching at formation of mesa-structures with the submicron sizes |
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51 |
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A. V. Voitsekhovskii, S. N. Nesmelov, S. M. Dzyadukh, V. V. Vasil`ev, V. S. Varavin, S. A. Dvoretskii, N. N. Mikhailov, V. D. Kuzmin, V. G. Remesnik and Yu. G. Sidorov The investigation of admittance of MIS-structures based on graded-gap MBE n-HgCdTe (x = 0.22—0.23 and 0.31—0.32) in wide temperature range |
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56 |
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A. V. Voitsekhovskii, S. N. Nesmelov, S. M. Dzyadukh, V. V. Vasil`ev , V. S. Varavin, S. A. Dvoretskii, N. N. Mikhailov, V. D. Kuzmin, V. G. Remesnik and Yu. G. Sidorov The peculiarities of admittance of MIS structures based on graded-gap MBE p-HgCdTe (x = 0.22—0.23) |
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62 |
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S. S. Demidov and E. A. Klimanov Influence of parameters of a semiconductor-dielectric border on the current of a guard ring for silicon photodiodes |
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68 |
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S. S. Demidov, E. A. Klimanov and M. A. Nuri The coordinate silicon photodiode with improved parameters |
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73 |
| A. S. Kashuba, C. V. Golovin, K. O. Boltar, E. V. Permikina and A. S. Atrashkov Investigation of influence the heat processing time on electrophysical characteristics of CdхHg1-хTe multilayered structures | 76 | |
| I. D. Burlakov, I. А. Denisov, A. L. Sizov, А. А. Silina and N. А. Smirnova The surface roughness investigation of CdZnTe substrates by different measuring methods of nanometer accuracy | 80 | |
| B. A. Kostiuk, V. S. Varavin, I. O. Parm, V. G. Remesnik and G. Y. Sidorov Influence of plasma etching and following storage on the CdHgTe electrical properties | 85 | |
| D. S. Andreev, T. N. Grishina, T. N. Mishchenkova, M. A. Trishenkov and I. V. Chinareva Forming of the general contact in a mesaplanar FPA on basis of the InGaAs/InP heteroepitaxial structures | 90 | |
| O. S. Komkov, D. D. Firsov, E. A. Kovalishina and A. S. Petrov Spectral absorption characteristics in epitaxial structures based on InAs at temperatures of 80 K and 300 K | 93 |
PHYSICAL APPARATUS AND ITS ELEMENTS
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B. V. Melkoumian Laser accelerometer on base of the autonomous resonator sensor |
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97 |
INFORMATION
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Rules for authors |
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102 |
