21.11.2014
PRIKLADNAYA FIZIKA
(APPLIED PHYSICS)
THE SCIENTIFIC AND TECHNICAL JOURNAL
No. 5 Founded in 1994 Moscow 2014
C O N T E N T S
GENERAL PHYSICS
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A. V. Voitsekhovskii and D. I. Gorn Laser generation in the structures with CdHgTe quantum wells |
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5 |
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A. G. Rokakh, M. I. Shishkin, S. B. Venig, M. D. Matasov, and V. S. Atkin Analogies between exoelectroniс photoemission and secondary ionic photoeffect in semiconductors |
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11 |
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M. V. Logunov, V. A. Neverov, and B. F. Mamin Investigation of structural inhomogeneity of silicon carbide by the low-angle X-ray scattering method |
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15 |
PLASMA PHYSICS AND PLASMA METHODS
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P. S. Plyaka, S. H. Alikhadjiev, and G. N. Tolmachev Investigation of dust particles, forming by complex oxide sputtering in oxygen radiofrequency discharge |
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19 |
ELECTRON, ION, AND LASER BEAMS
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V. V. Kulish, A. V. Lysenko, G. A. Oleksiienko, V. V. Koval, and M. Yu. Rombovsky Plasma-beam superheterodyne FELs with helical electron beams |
24 | |
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V. I. Krylov and V. V. Khomyakov Bremsstrahlung of electrons passing through the multilayer structure of Coulomb centers and accelerated by a homogeneous electric field |
29 | |
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A. Y. Cheban, N. P. Khrunina, and N. A. Leonenko Improvement of technology of continuous extraction of rocks with the use of laser radiation |
34 |
PHOTOELECTRONICS
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V. A. Kholodnov, I. D. Burlakov, and A. A. Drugova Analytical approach to the selection of the optimal structure of avalanche heterophotodiodes on the basis of direct bandgap semiconductors |
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38 |
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A. V. Voytsekhovskiy, A. P. Kokhanenko, and K. A. Lozovoy Optimization of growth conditions for improvement of parameters of photoreceivers and solar cells with quantum dots |
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45 |
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V. M. Akimov, D. S. Andreev, S. S. Demidov, N. A. Irodov, and E. A. Klimanov The current-voltage characteristics of photodiodes of the planar type FPA based on p-InP/InGaAs/n-InP structure |
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50 |
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D. L. Baliev, P. S. Lazarev, and K. O. Boltar Research of main photoelectric characteristics of the 320´256 InGaAs FPA’s |
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54 |
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A. G. Rokakh, M. I. Shishkin, A. A. Skaptsov, and V. A. Puzynya On the possibility of the plasma resonance in CdS-PbS films in the middle infrared region |
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58 |
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P. S. Skrebneva, I. D. Burlakov, and N. I. Iakovleva Investigation of the heteroepitaxial CdHgTe structures by spectroscopic ellipsometry |
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61 |
| A. S. Kashuba, E. V. Permikina, and S. V. Golovin Investigation of the surfaces of CdхHg1-хTe epitaxial heterostructuresafter etching | 67 | |
| M. B. Grishechkin, I. A. Denisov, A. A. Silina, N. A. Smirnova, and N. I. Shmatov Investigation of growing conditions of
Cd1-xZnxTe single crystals (x £ 0,04) by the vertical directed сrystallization (Bridgman) method | 72 | |
| R. S. Madatov, A. C. Alekbarov, O. M. Hasanov, and R. B. Bayramov Influence of the Sm atom impurity and gamma irradiation on photoconductivity spectrum of layered GeS monocrystals | 76 |
PHYSICAL APPARATUS AND ITS ELEMENTS
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E. A. Bedareva, L. I. Gorelik, A. A. Kolesova, A. V. Polesskiy, N. A. Semenchenko, A. I. Shketov High-aperture dual-band infrared lens |
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80 |
| D. T. Tiranov, A. A. Guseva, and V. L. Philippov Modeling objects brightness fields against the background of the broken cloud cover of atmosphere at observing from a lower hemisphere | 85 |
INFORMATION
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Rules for authors |
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88 |
| Three Volumes on Photoelectronics | 90 | |
| Subscription | 92 |
