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- Article name
- ESTIMATIONS OF VALUES SPICE PARAMETERS OF MOSFET MODELS IN BSIM 4.6.1 BY MODELLING OF BARRIER CAPACITANCE OF DIODE STRUCTURES
- Authors
- Yusipova J. А. , , Linda_nike@mail.ru, Moscow Institute of Electronic Technology (Technical University), Moscow, Russia
- Keywords
- mathematical model / capacitance of p+-n-junction / diode structure / barrier capacitance / shallow and deep donor-type levels / C-V characteristics
- Year
- 2011 Issue 1 Pages 68 - 73
- Code EDN
- Code DOI
- Abstract
- A mathematical model for the calculation of C-V characteristics of diode structures, and a graphic interface for the design of barrier capacitance of diode structures were developed with the use of MATLAB. By the series of calculable experiments C-V characteristics of investigational structures were got. The capacitance of p+-n-junction and barrier of Schottky are computed in the n-region of which there are shallow and deep donor-type levels. Calculation C-V characteristics are confirmed experimental information.
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