To obtain access to full text of journal and articles you must register!
- Article name
- OPTIMIZATION OF SHF SELF-ALIGNED TRANSISTOR STRUCTURES BASED ON PURE SILICON AND OF L0W-NOISE WIDEBAND AMPLIFIER FOR RADIO FREQUENCY ICs WITH MEMS COMPONENTS Рart 1.
- Authors
- Verner V. D., , tc@tcen.ru, SMC "Technological Centre" MIET, Moscow, Russia
Saurov A. N., , tc@tcen.ru, SMC "Technological Centre" MIET, Moscow, Russia
Metelkov P. V., , pavel_metelkov@mail.ru, National Research University of Electronic Technology, Moscow, Russia
Lukanov N. M., , N. Loukanov@tcen.ru, SMC "Technological Center" of MIET, Moscow, Russia
- Keywords
- SHF self-aligned transistor structure (SSATC) / pure silicon / low-noise wideband amplifier (LNA) / parameters of model Gummel-Poon / MEMS / radio frequency ICs with 5.2 GHz
- Year
- 2011 Issue 1 Pages 78 - 84
- Code EDN
- Code DOI
- Abstract
- Optimization of construction and technology bipolar SHF self-aligned transistor structure (SSATC) on pure silicon was done, using the programs of device, processes modeling and designed parameters of Gummel-Poon model. The simplified electric schematic circuit of low-noise wideband amplifier (LNA) based on both: SSATC and components of MEMS is presented as a suitable for radio frequency ICs with 5.2 GHz.
- Text
- To obtain access to full text of journal and articles you must register!
- Buy
