To obtain access to full text of journal and articles you must register!
- Article name
- RESEARCH OF LAYERS OXYNITRIDE SILICON AND PROCESS OF THEIR SEDIMENTATION OF A STEAM PHASE AMMONOLYSIS DICHLORSILANE AT PRESENCE NITROUS OXIDE AT THE LOWERED PRESSURE
- Authors
- Manzha N. M., , , Technological Centre, Moscow Institute of Electronic Technology (Technical University), Russia
- Keywords
- sedimentation oxynnitride silicon / nitrogen monoxide / ammonolysis dichlorsilane at presence nitrogen monoxide / Locos-isolation / in the capacity of heat-resistant mask. The brid´s ´beak
- Year
- 2010 Issue 1 Pages 83 - 87
- Code EDN
- Code DOI
- Abstract
- Research of properties of layers oxynitride silicon and process of their sedimentation of a steam phase ammonolysis dichlorsilane at presence nitrous oxide is submitted. The received layers can be used as a heat-resistant mask at formation Locos isolation CMOS-of structures VLSI on substrates SOI (silicon on insulator) in submicronic.
- Text
- To obtain access to full text of journal and articles you must register!
- Buy