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- Article name
- Semiconductor lasers with quantum points InAs
- Authors
- ALFEROV Zh., , , A. Ioffe Physics techmical institute RAS,
NIKITINA E., , , A. Ioffe Physics techmical institute RAS,
EGOROV A., , , A. Ioffe Physics techmical institute RAS,
ZHUKOV A., , , A. Ioffe Physics techmical institute RAS,
USTINOV V., , , A. Ioffe Physics techmical institute RAS,
- Keywords
- Year
- 2004 Issue 4 Pages 14 - 26
- Code EDN
- Code DOI
- Abstract
- During last years structures with quantum points based on materials InAs (In, Al) GaAs are the object of intensive research. The great interest to lasers with quantum points, first of all, is caused by opportunity of achievement of extraordinary low threshold density of a current and an opportunity of reception of radiation with lengths of waves 1.3 and 1.55 microns, corresponding to spectral windows of an optical fibre. The laser diodes radiating on lengths of waves 1.3 and 1.55 microns are key elements of high-speed fibre optical communication lines.
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