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- Article name
- Effect of silicon contamination by carbon on the process of silicon impregnation by CVI method and combined CVI/LSI method
- Authors
- BUSHUYEV V. M., , uniikm@yandex.ru, JSC Ural Scientific Research Institute of Composite Materials, Perm, Russia
BUSHUYEV M. V., , maksim.bush@mail.ru, JSC Ural Scientific Research Institute of Composite Materials, Perm, Russia
VOROBYEV A. S., , vorobyov_as@uniikm.ru, Ural Scientific Research Institute of Composite Materials, Perm, Russia
- Keywords
- combined CVI/LSI method of silicon impregnation / silicon contamination by carbon / carbon-containing reactor gases / silicon vaporization / silicon vapors condensation
- Year
- 2018 Issue 2 Pages 29 - 36
- Code EDN
- Code DOI
- Abstract
- This article evaluates the effects of silicon contamination by carbon and of carbon gases high concentrations in reactor on the process of silicon impregnation by combined CVI/LSI method. In an experimental way it was established that silicon contamination by carbon through solid and vapour phases exerts negative impact on the process of silicon impregnation by combined CVI/LSI method, when performing it in isothermal heating systems. It was found out that this influence is attributed to silicon carbide film formation on the surface of silicon melt mirror and to partial chemical bonding of silicon vapour by carbon-containing reactor gases. To the maximum extent this negative effect is manifested in the temperature range of 1000-1550 оC. It was shown that the implementation of the process of silicon vapour condensation provides full elimination of the negative effects of silicon contamination by carbon and of partial silicon vapour bonding by carbon-containing reactor gases. It was specified that reducing of silicon contamination by carbon and increasing of reactor volume purity enable the reliability improvement of operation of silicon impregnation systems, which use combined CVI/LSI method.
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